Two-Level BEOL Processing for Rapid Iteration in MRAM Development
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Overview: The implementation of Magnetic Random Access Memory (MRAM) hinges on complex magnetic film stacks and several critical steps in Back-End-Of-Line (BEOL) processing. This paper reports on a novel test site design and an associated thin-film process integration scheme which permit relatively inexpensive, rapid characterization of the critical elements in MRAM device fabrication. The approach described in this paper provides an inexpensive means for rapidly iterating on MRAM development alternatives to converage on an implementation suitable for a production environment.