Rapid-Turnaround Characterization Methods for MRAM Development
Click here to download now
Overview: Magnetic Random Access Memory (MRAM) technology, based on the use of Magnetic Tunnel Junctions (MTJs), holds the promise of improving on the capabilities of existing charge-based memories. This paper reviews rapid-turnaround methods which have been developed or applied in new ways to characterize MRAM chips at various stages during processing, with particular emphasis on the MTJs. The methods include Current-In-Plane Tunneling (CIPT), Kerr magnetometry, Vibrating Sample Magnetometry (VSM), and Conducting Atomic Force Microscopy (CAFM).