Samsung Samples 'Smallest' 2 Gb Memory Module - InformationWeek

InformationWeek is part of the Informa Tech Division of Informa PLC

This site is operated by a business or businesses owned by Informa PLC and all copyright resides with them.Informa PLC's registered office is 5 Howick Place, London SW1P 1WG. Registered in England and Wales. Number 8860726.

IoT
IoT
Infrastructure // PC & Servers

Samsung Samples 'Smallest' 2 Gb Memory Module

The next-generation memory style is expected to increase from 29% of the DRAM market in terms of units sold to 72% by 2011, according to IDC.

Samsung Electronics on Monday said it is offering samples of what the company claims is the smallest 2-Gb DDR3 module used in building computer memory chips.

The 50-nanometer circuit technology enables the use of up to 8 GB of memory chips for RIMMs, or registered in-line memory modules, without the need of stacking components, Samsung said. The technology also enables the use of 4 GB for SODIMMs, or small outline dual in-line memory modules, and UDIMMs, or unregistered in-line memory modules. In addition, 2-Gb DDR3 RIMMS can be designed to 16 GB by applying dual-die packages.

DDR3 is part of the synchronous dynamic random access memory (SDRAM) line and is an improvement over DDR2. SDRAM technology is used for high-speed storage of the working data of a computer or other digital electronic device.

In building the latest 2-Gb module, Samsung "focused on maximizing density alternatives and power savings to make our 2-Gb DDR3 solution as flexible as possible for designers," Jim Elliott, VP of memory at Samsung Semiconductor, said in a statement.

The latest chip is an alternative to having two 1-Gb memory devices. The larger memory module can be used to build memory chips that use at least 40% less power than dual-chip products, Samsung said. The 2-Gb device supports a data rate of up to 1.3 Gbps at 1.5 or 1.35 volts, making it up to 1.6 times faster than an 800-Mbps 1 Gb-based dual-die package. In addition, the reduced number of DDR3 chips lowers heat emissions.

Samsung plans to make its 50-nm manufacturing process its primary DRAM fab technology next year. Mass production of the latest module is scheduled to begin before the end of this year. Samsung started volume production of 50-nm 1-Gb DDR2 modules in April.

DDR3 is expected to increase from 29% of the DRAM market in terms of units sold to 72% by 2011, according to IDC. The 2-Gb device segment is expected to grow from 3% to nearly a third by 2011.

We welcome your comments on this topic on our social media channels, or [contact us directly] with questions about the site.
Comment  | 
Print  | 
More Insights
InformationWeek Is Getting an Upgrade!

Find out more about our plans to improve the look, functionality, and performance of the InformationWeek site in the coming months.

Slideshows
11 Things IT Professionals Wish They Knew Earlier in Their Careers
Lisa Morgan, Freelance Writer,  4/6/2021
News
Time to Shift Your Job Search Out of Neutral
Jessica Davis, Senior Editor, Enterprise Apps,  3/31/2021
Commentary
Does Identity Hinder Hybrid-Cloud and Multi-Cloud Adoption?
Joao-Pierre S. Ruth, Senior Writer,  4/1/2021
White Papers
Register for InformationWeek Newsletters
Video
Current Issue
Successful Strategies for Digital Transformation
Download this report to learn about the latest technologies and best practices or ensuring a successful transition from outdated business transformation tactics.
Slideshows
Flash Poll