Samsung Develops 512 Mb DRAM For Mobile Devices

MANHASSET, N.Y. — Samsung Electronics Co. Ltd. has completed a working prototype of a 512 Mb dynamic random access memory for mobile products that operates at up to 333 megabits per second, transmitting 32 bits of data simultaneously.

Samsung (Seoul, South Korea) said the chip is fast enough to support 3D graphics and streaming video in next-generation mobile phones, PDAs, portable scanners, and other handheld products.

Operating on 1.8 volts, the chip will be available in double data rate (DDR) and synchronous DRAM (SDRAM) formats. Samsung will also develop DRAM versions in multichip and system-in-a-package (SIP) devices.

Samsung will begin producing the chip the second half of 2005.